Fully automatic Wafer sorting equipment
• ASW6000 series wafer sorting equipment supports wafer mutual transfer between 2-6 PORTs, is compatible with SEMI standard Foup, Fosb and Open Cassette, and is equipped with microenvironment clean kee
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• ASW6000 series wafer sorting equipment supports wafer mutual transfer between 2-6 PORTs, is compatible with SEMI standard Foup, Fosb and Open Cassette, and is equipped with microenvironment clean kee
Atomic Layer Deposition (ALD) is a thin-film tech based on self-limiting surface reactions. It uses alternating, pulsed reactive precursors that adsorb and react sequentially on substrates, forming films with single
The SINO Plasma6000CCP dielectric etcher is a high - performance tool for semiconductor and related manufacturing. It operates based on Capacitively Coupled Plasma (CCP) technology, where two parallel metal plates genera
The SINO Plasma2000 PECVDS uses plasma to assist chemical vapor deposition. It enables deposition of thin films like SiO₂ and Si₃N₄ at relatively low temperatures, crucial for temperature - sensitive substrates. This sys
The SINO Plasma7000Metal is a metal etcher. It selectively removes metal layers on semiconductor wafers, leveraging plasma - based reactions. It ensures high - precision etching, minimizing damage to underlying layers, w
The SINO Plasma2000ICP is an ICP etcher. It generates high - density plasma through inductively coupled coils. It etches materials such as Si, SiO₂, and Si₃N₄ with high accuracy, offering fast etching rates and excellent
A 12-inch wafer - dedicated integrated coating and developing equipment. It enables uniform photoresist coating and precise developing. By optimizing parameters like coating rotation speed and developing time, it ensures
A single - wafer chemical cleaning equipment. It uses customized chemical reagents and cleaning processes to target and remove contaminants (such as particles and organic residues) on the wafer surface. It avoids cross -
A single - wafer wet etching equipment based on wet process. By precisely controlling the concentration, temperature and contact time of the etchant, it achieves selective etching of wafer materials (such as silicon and
