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SINO Plasma6000CCP dielectric etcher
The SINO Plasma6000CCP dielectric etcher is a high - performance tool for semiconductor and related manufacturing. It operates based on Capacitively Coupled Plasma (CCP) technology, where two parallel metal plates generate a plasma. A typical 13.56 MHz RF power source drives the system. When energized, electrons in the gas gain energy, ionize the gas, and the resulting ions bombard the material surface for etching.
This etcher is suitable for 8 - inch and smaller substrates made of materials like silicon, SiC, GaN, GaAs, sapphire, and quartz glass. It finds wide applications in processes such as Contact/Via, Spacer, Passivation, Hardmask, SAB, and Etch Back. With advantages like high etching precision due to good ion bombardment directionality, fast etching speed from high - density plasma, and excellent uniformity from stable, low - pressure plasma, the SINO Plasma6000CCP dielectric etcher meets the demanding requirements of modern microfabrication.
Process application
Contact/Via、Spacer、Passivation、Hardmask、SAB、Etch Back
Wafer size
8 inches and below
Applicable substrate material
Silicon, silicon carbide, gallium nitride, gallium arsenide, sapphire, quartz glass
Application area
Scientific research, Si based process, compounds (including GaN&GaAs&SiC, etc.), MEMS field, filter, optical communication, micro display and other fields
