.jpg)
Atomic Layer Deposition
Atomic Layer Deposition (ALD) is a thin-film tech based on self-limiting surface reactions. It uses alternating, pulsed reactive precursors that adsorb and react sequentially on substrates, forming films with single-atom/molecule precision.
Its "self-limiting" trait ensures each precursor pulse forms one adsorption layer. Inert gas purges by-products/unreacted precursors, avoiding precursor mixing. This enables nanoscale/atomic-level thickness control, plus good uniformity and conformality on complex substrates (e.g., high-aspect-ratio structures).
ALD is widely used in semiconductors (chip gate dielectrics, barriers), new energy (battery electrode modification, solid electrolytes), optics, and sensors, serving as a core tech for high-precision, high-performance thin films.
Process application
Gate high K dielectric layer and metal layer, deep groove (depth width ratio>200) MIM structure, TSV deep hole coating.
Wafer size
8 inches and below
Sedimentary materials
Al2O3、TiO2、SiO2、HfO2、ZrO2、Ta2O5、ZrO2、 La2O3、AlN、TiN、 TaNx 、Cu、Co﹑Ru et al
Application area
GaN HEMT power semiconductor, SiC MOS-FET power semiconductor, ferroelectric memory FRAM, MEMS, 8-inch integrated circuit IC, 3D package.
