.jpg)
SINO Plasma2000 PECVDS
The SINO Plasma2000 PECVDS uses plasma to assist chemical vapor deposition. It enables deposition of thin films like SiO₂ and Si₃N₄ at relatively low temperatures, crucial for temperature - sensitive substrates. This system can create films with good uniformity and precise thickness control.
Process application
α-Si，SiO2，SixNy，PSG，BPSG
Wafer size
8 inches and below
Applicable substrate material
Silicon, silicon carbide, gallium nitride, gallium arsenide, sapphire, quartz glass
Chamber type
Monolithic
α-Si，SiO2，SixNy，PSG，BPSG
Wafer size
8 inches and below
Applicable substrate material
Silicon, silicon carbide, gallium nitride, gallium arsenide, sapphire, quartz glass
Chamber type
Monolithic
Related Products
The SINO Plasma2000ICP is an ICP etcher. It generates high - density plasma through inductively coupled coils. It etches materials such as Si, SiO₂, and Si₃N₄ with high accuracy, offering fast etching rates and excellent
The SINO Plasma7000Metal is a metal etcher. It selectively removes metal layers on semiconductor wafers, leveraging plasma - based reactions. It ensures high - precision etching, minimizing damage to underlying layers, w
The SINO Plasma6000CCP dielectric etcher is a high - performance tool for semiconductor and related manufacturing. It operates based on Capacitively Coupled Plasma (CCP) technology, where two parallel metal plates genera
Atomic Layer Deposition (ALD) is a thin-film tech based on self-limiting surface reactions. It uses alternating, pulsed reactive precursors that adsorb and react sequentially on substrates, forming films with single